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| 6AM14 Silicon N Channel / P Channel Power MOS FET Array Application Hgh speed power switching SP-12TA Features * * * * Low on-resistance Low drive current High speed switching High density mounting Pch 4 6 1 1 : Nch Source 2, 8, 9 : Nch Gate 3, 7,10 : Nch Drain : Pch Drain 4, 6,11 : Pch Gate 5, 12 : Pch Source 12 5 12 11 3 Nch 2 8 7 10 9 1 Table 1 Absolute Maximum Ratings (Ta = 25C) Ratings ---------------- Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Pch** Tch Tstg Nch 60 20 7 28 7 42 4.8 150 -55 to +150 Pch -60 20 -7 -28 -7 Unit V V A A A W W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at 6 Drive operation 6AM14 Table 2 Electrical Characteristics N Channel (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 4A VGS = 4V * ID = 2A VGS = 2.5V * ID = 4 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V, ID = 4 A RL = 7.5 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 0.5 -- -- -- -- 0.14 10 250 1.5 0.2 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ------------------------------------------------ -- 0.22 0.5 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 4.0 6.5 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 500 240 30 15 90 110 250 1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 7A, VGS = 0 IF = 7A, VGS = 0 diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 170 -- ns -------------------------------------------------------------------------------------- 6AM14 Table 2 Electrical Characteristics P Channel (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -60 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -50 V, VGS = 0 VDS = -10 V, ID = -1 mA -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -0.5 -- -- -- -- 0.12 10 -250 -1.5 0.16 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -4 A VGS = -4 V * ID = -2 A VGS = -2.5 V * ID = -4 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz VGS = -10 V, ID = -4 A RL = 7.5 ------------------------------------------------ -- 0.16 0.3 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) 5.0 8.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1450 590 120 15 75 240 180 -1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -7 A, VGS = 0 IF = -7 A, VGS = 0 diF / dt = 50A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- VDF trr tf td(off) tr -------------------------------------------------------------------------------------- -- 210 -- ns -------------------------------------------------------------------------------------- 6AM14 Maximum Channel Power Dissipation Curve Pch (mW) Pch (mW) 6 5 4 3 2 1 60 Maximum Channel Power Dissipation Curve Channel Power Dissipation Channel Power Dissipation 6 Drive Operation 4 Drive Operation 2 Drive Operation 1 Drive Operation 40 6 Drive Operation 4 Drive Operation 2 Drive Operation 1 Drive Operation 20 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature Ta (C) Case Temperature Tc (C) |
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